MBRS3100T3 preferred device surface mount schottky power rectifier . . . employing the schottky barrier principle in a large area metaltosilicon power diode. stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. ? small compact surface mountable package with jbend leads ? rectangular package for automated handling ? highly stable oxide passivated junction ? excellent ability to withstand reverse avalanche energy transients ? guardring for stress protection mechanical characteristics: ? case: epoxy, molded ? weight: 217 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? shipped in 16 mm tape and reel, 2500 units per reel ? polarity: notch in plastic body indicates cathode lead ? esd ratings: machine model = c esd ratings: human body model = 3b ? marking: b310 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 volts average rectified forward current (at rated v r , t l = 100 c) i f(av) 3.0 amps nonrepetitive peak surge current (surge applied at rated load condi- tions halfwave, single phase, 60 hz) i fsm 130 amps operating junction temperature range t j 65 to +150 c thermal characteristics thermal resistance junction to lead r q jl 11 c/w device package shipping ordering information smc case 403 plastic MBRS3100T3 smc 2500/tape & reel schottky barrier rectifiers 3.0 amperes 100 volts preferred devices are recommended choices for future use and best overall value. marking diagram yww b310 y = year ww = work week b310 = device code product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics maximum instantaneous forward voltage (note 1) (i f = 3.0 a, t j = 25 c) (i f = 6.0 a, t j = 25 c) (i f = 3.0 a, t j = 125 c) (i f = 6.0 a, t j = 125 c) v f 0.79 0.90 0.62 0.70 volts maximum instantaneous reverse current (note 1) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 125 c) i r 0.05 5.0 ma 1. pulse test: pulse width = 300 m s, duty cycle 2.0%. figure 1. typical forward voltage 0.4 0.3 0.5 0.2 0.9 10 0.1 1 i f , instantaneous forward current (amps) v f , instantaneous forward voltage (volts) figure 2. maximum forward voltage 0.4 0.6 0.7 0.5 1 10 0.1 1 v f , instantaneous forward voltage (volts) i f , instantaneous forward current (amps) figure 3. typical reverse current 20 60 04080 1e07 1e06 i r , reverse current (amps) v r , reverse voltage (volts) figure 4. typical capacitance 125 c 25 c 1e05 1e04 1e03 125 c 75 c 25 c 20 60 04080 c, capacitance (pf) v r , reverse voltage (volts) 1000 25 c 1e08 0.3 10 0.7 0.6 0.8 75 c 0.8 0.9 75 c 100 100 100 125 c t j = 25 c product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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